Additional preview pages of the CEM6355 datasheet.
Product details
Features
-60V, -6A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65
SO-8
1
1 234 S SSG.
📁 Similar Datasheet
CEM6056 - N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6086 - N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6086L - N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6088 - Dual N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6088L - Dual N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6186 - N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6188 - Dual N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)
CEM6200 - N-Channel Enhancement Mode Field Effect Transistor(Chino-Excel Technology)