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Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM4279
5
FEATURES
40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8
D1 8 D1 7 D2 6 D2 5
1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 40 P-Channel -40 Units V V A A W C
±20
6.1 24 2.0 -55 to 150
±20
-4.
CEM4279 Datasheet
