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CEK01N65 - N-Channel Enhancement Mode Field Effect Transistor

Features

  • 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N65.

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Datasheet Details

Part number CEK01N65
Manufacturer CET
File Size 490.08 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEK01N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N65 PRELIMINARY D G G D G S D TO-92(Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Units V V A A W C ±30 0.35 1.4 3.