CEJ8218 transistor equivalent, dual n-channel enhancement mode field effect transistor.
20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead.
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