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CEP9060R/CEB9060R CEF9060R
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 100A 100A 100A
e
@VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
Units V V
55
±20
100 300 200 1.3 480 50 -55 to 175 100 300 75 0.
CEF9060R Datasheet
