Type CEP07N7 CEB07N7 CEF07N7
VDSS 700V 700V
700V
RDS(ON) 1.5Ω 1.5Ω
1.5Ω
ID 6.6A 6.6A 6.6A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
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CEP07N7/CEB07N7 CEF07N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP07N7 CEB07N7 CEF07N7
VDSS 700V 700V
700V
RDS(ON) 1.5Ω 1.5Ω
1.5Ω
ID 6.6A 6.6A 6.6A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
700
±30
6.6 26.4 166 1.3
6.6d 26.4d 50 0.4
Repetitive Avalanche Energy
EAR 3.
CEF07N7 Datasheet
