CEB630N transistor equivalent, n-channel enhancement mode field effect transistor.
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Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID @VGS 9A 10V 9A 10V 9A d 10V Super high dense cell design for extremely low RDS(ON). Hig.
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