-55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lea.

CEB51A3

CEB50N06

CEB50N10

CEB50P03

CEB540A

CEB540L

CEB540N

CEB01N6

CEB01N65

CEB01N6G

CEB02N6

CEB02N65A

CEB02N65D

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