-30V, -30A, RDS(ON) =32mΩ @VGS = -10V. RDS(ON) =50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lea.

CEB3060

CEB3070

CEB30N15L

CEB30N3

CEB3120

CEB3205

CEB35P03

CEB35P10

CEB01N6

CEB01N65

CEB01N6G

CEB02N6

CEB02N65A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts