-30V, -18A,RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Le.

CEB05N65

CEB01N6

CEB01N65

CEB01N6G

CEB02N6

CEB02N65A

CEB02N65D

CEB02N65G

CEB02N6A

CEB02N6G

CEB02N7

CEB02N7G

CEB02N9

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