NE68630 transistor equivalent, silicon transistor.
* HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
* LOW VOLTAGE/LOW CURRENT OPERATION
* HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 d.
NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available .
The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is availa.
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