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NE68630 Datasheet, CEL

NE68630 transistor equivalent, silicon transistor.

NE68630 Avg. rating / M : 1.0 rating-11

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NE68630 Datasheet

Features and benefits


* HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
* LOW VOLTAGE/LOW CURRENT OPERATION
* HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 d.

Application

NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available .

Description

The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is availa.

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TAGS

NE68630
SILICON
TRANSISTOR
CEL

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