NE68035 transistor equivalent, npn silicon high frequency transistor.
* HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
* LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz
* HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz
* .
Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six di.
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low c.
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