NE5511279A datasheet, fet equivalent, CEL

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datasheet Download (Size : 797.72KB)

Features and benefits

* High output power
* High power added efficiency
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS.

Application

* 460 MHz Radio Systems
* 900 MHz Radio Systems ORDERING INFORMATION Part Number NE5511279A-T1 NE5511279A-T1A .

Description

The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This dev.

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