NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

CEL

The NE3510M04 by CEL is a HETERO JUNCTION FIELD EFFECT TRANSISTOR. Below is the official datasheet preview.

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NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR by CEL - Datasheet Preview — Official preview page of the **NE3510M04** HETERO JUNCTION FIELD EFFECT TRANSISTOR datasheet (CEL).

Datasheet Details

Part number	NE3510M04
Manufacturer	CEL
File Size	204.40 KB
Description	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	NE3510M04_CEL.pdf
Additional preview pages of the NE3510M04 datasheet.

NE3510M04 Product details

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only).
Flat-lead 4-pin thin-type super minimold (M04) package.

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Published: Nov 10, 2013 |