NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR
CEL
General Description
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.
Key Features
Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only).
Flat-lead 4-pin thin-type super minimold (M04) package.
Full PDF Text Transcription for NE3510M04 (Reference)
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NE3510M04. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0....
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EL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.
NE3510M04 Datasheet
