NE3510M04 transistor equivalent, hetero junction field effect transistor.
* Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS .
* Satellite radio (SDARS, DMB, etc.) antenna LNA
* Low noise amplifier for microwave communication system
ORDER.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a.
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