NE3210S01 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

Datasheet Details

Part number	NE3210S01
Manufacturer	CEL
File Size	729.40 KB
Description	HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	NE3210S01-CEL.pdf

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
Gate Length: Lg ≤ 0.20 µm.
Gate Width : Wg = 160 µm.

📁 NE3210S01 Similar Datasheet

NE321000 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)
NE32400 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)
NE32484A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE32484A-SL - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE32484A-T1 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE32484A-T1A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)
NE32500 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)
NE32584 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

Other Datasheets by CEL

NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02 - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3514S02 - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Published: Jun 28, 2019 |