Full PDF Text Transcription for NE3210S01 (Reference)
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NE3210S01. For precise diagrams, and layout, please refer to the original PDF.
Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION Th...
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X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs./reel NE3210S01-T1B Tape & reel 4 000 pcs./reel Marking K Remark For sample order, please contact you
NE3210S01 Datasheet
