NE3210S01 transistor equivalent, hetero junction field effect transistor.
* Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm
ORDE.
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
* Super Low Noise Figure & .
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