logo

NE02135 Datasheet, CEL

NE02135 transistor equivalent, npn silicon high frequency transistor.

NE02135 Avg. rating / M : 1.0 rating-11

datasheet Download

NE02135 Datasheet

Features and benefits


* HIGH INSERTION GAIN: 18.5 dB at 500 MHz
* LOW NOISE FIGURE: 1.5 dB at 500 MHz
* HIGH POWER GAIN: 12 dB at 2 GHz
* LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2.

Application

00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB.

Description

NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or .

Image gallery

NE02135 Page 1 NE02135 Page 2 NE02135 Page 3

TAGS

NE02135
NPN
SILICON
HIGH
FREQUENCY
TRANSISTOR
NE02132
NE02133
NE02137
CEL

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts