TN2222A Overview
Key Specifications
Description
SYMBOL TEST CONDITION Collector Emitter Voltage *VCEO IC=10mA, IB=0 Collector Base Voltage Emitter Base Voltage VCBO VEBO IC=10µA, IE=0 IE=10µA, IC=0 Collector Cut Off Current ICEX VCE=60V, VEB(off)=3V Collector Cut Off Current ICBO VCB=60V, IE=0 VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current IEBO VEB=3V, IC=0 Base Cut Off Current IBL VCE=60V, VEB(off)=3V DC Current Gain hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V IC=150mA, VCE=1V IC=500mA, VCE=10V *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% TN2222ARev080304E Continental Device India Limited Data Sheet MIN 40 75 6 35 50 75 100 50 40 UNIT V V V mA W W W W ºC ºC/W ºC/W ºC/W ºC/W MAX 10 10 10 10 20 UNIT V V V nA nA µA nA nA 300 Page 1 of 5 NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC DESCRIPTION Collector Emitter Saturation Voltage Base Emitter Saturation Voltage SYMBOL *VCE (sat) *VBE (sat) TEST CONDITION IC=150mA, IB=1.
