Datasheet Details
| Part number | CC5401 |
|---|---|
| Manufacturer | CDIL |
| File Size | 87.43 KB |
| Description | PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO |
| Download | CC5401 Download (PDF) |
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Overview: www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 (9AW) TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS.
| Part number | CC5401 |
|---|---|
| Manufacturer | CDIL |
| File Size | 87.43 KB |
| Description | PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO |
| Download | CC5401 Download (PDF) |
|
|
|
SYMBOL VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO Emitter -Base Voltage IC Collector Current Continuous PD Power Dissipation @Ta=25 degC Derate Above 25 deg C PD Power Dissipation @Tc=25 degC Derate Above 25 deg C Tj Junction Temperature Tstg Storage Temperature THERMAL RESISTANCE Rth(j-c) Junction to Case Rth(j-a) Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN VCEO* IC=1uA,IB=0 150 Collector -Emitter Voltage VCBO IC=100uA.IE=0 160 Collector -Base Voltage VEBO IE=10uA, IC=-0 5.0 Emitter -Base Voltage ICBO VCB=160V, IE=0 Collector-Cut off Current Ta=100 deg C VCB=160V, IE=0 VCE=150V, IB=0 VEB=4V, IC=0 IC=1mA,VCE=5V IC=10mA,VCE=5V IC=50mA,VCE=5V VALUE 150 160 5.0 600 625 5.0 1.5 12 150 -55 to +150 83.3 200 TYP MAX 50 UNIT V V V mA mW mw/deg C W mw/deg C deg C deg C deg C/W deg C/W UNIT V V V nA 50 80 50 - Emitter-Cut off Current DC Current Gain ICEO IEBO hFE* 50 1.0 50 320 - uA uA nA Continental Device India Limited Data Sheet Page 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN VCE(Sat)* IC=10mA,IB=1mA Collector Emitter Saturation Voltage IC=50mA,IB=5mA VBE(Sat) * IC=10mA,IB=1mA Base Emitter Saturation Voltage IC=50mA,IB=5mA Dynamic Characteristics hfe IC=1mA, VCE=10V 80 Small Signal Current Gain f=1KHz ft VCE=10V,IC=10mA, 100 Transition Frequency f=100MHz Cobo VCB=10V, IE=0 Output Capacitance f=1MHz NF VCE=5V, IC=250uA Noise Figure Rs=1kohms, f=10Hz to 15.7kHz TYP - MAX 0.2 0.5 1.0 1.0 320 300 6.0 8.0 CC5401 UNIT V V
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| Part Number | Description |
|---|---|
| CC5551 | NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR |