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C45C11 - PNP SILICON EPITAXIAL POWER TRANSISTORS

Download the C45C11 datasheet PDF. This datasheet also covers the C45C5 variant, as both devices belong to the same pnp silicon epitaxial power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 3

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C45C5-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C45C11
Manufacturer CDIL
File Size 205.61 KB
Description PNP SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet C45C11 Datasheet

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Other Datasheets by CDIL

Part Number Description
C45C5 PNP SILICON EPITAXIAL POWER TRANSISTORS
C45C8 PNP PLASTIC POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak* ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 30 30 Operating and Storage Junction Tj, Tstg -55 to +150 55 to +150 Temprature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 75 75 Junction to Case Rth(j-c) 4.2 4.