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BZT52C9V1 - SURFACE MOUNT SILICON ZENER DIODES

Download the BZT52C9V1 datasheet PDF. This datasheet also covers the BZT52C4V7 variant, as both devices belong to the same surface mount silicon zener diodes family and are provided as variant models within a single manufacturer datasheet.

Description

Forward Voltage Drop @ IF 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load SYMBOL VF PD IFSM VALUE 0.9 410 2.0 UNIT V mW A Operating Junction and Storage Temperature Range Tj - 55 to +150 °C Mounted on 5.0mm2

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Note: The manufacturer provides a single datasheet file (BZT52C4V7-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZT52C9V1
Manufacturer CDIL
File Size 321.01 KB
Description SURFACE MOUNT SILICON ZENER DIODES
Datasheet download datasheet BZT52C9V1 Datasheet

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Other Datasheets by CDIL

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SILICON ZENER DIODES BZT52C 4V7 to 39V SOD-123 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Forward Voltage Drop @ IF 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load SYMBOL VF *PD **IFSM VALUE 0.9 410 2.0 UNIT V mW A Operating Junction and Storage Temperature Range Tj - 55 to +150 °C * Mounted on 5.0mm2 ( 0.13mm thick) land areas ** Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Zener Voltage Zener Impedance VF @ 10mA <0.
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