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BC550B Datasheet NPN Transistor

Manufacturer: CDIL

Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CB E BC549,A.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 BC549 Collector Base Voltage VCBO BC550 IC=100µA, IE=0 BC549 Emitter Base V

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