Datasheet Details
| Part number | BC214 |
|---|---|
| Manufacturer | CDIL |
| File Size | 65.35 KB |
| Description | PNP Transistor |
| Download | BC214 Download (PDF) |
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Overview: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS IS/ISO 9002 Lic# QSC/L- 000019.
Download the BC214 datasheet PDF. This datasheet also includes the BC212 variant, as both parts are published together in a single manufacturer document.
| Part number | BC214 |
|---|---|
| Manufacturer | CDIL |
| File Size | 65.35 KB |
| Description | PNP Transistor |
| Download | BC214 Download (PDF) |
|
|
|
SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) 50 30 30 60 45 45 5 100 350 2.8 1 8 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC 357 ºC/W 125 ºC/W Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=2mA,IB=0 BC212 50 BC213, BC214 30 Collector Base Voltage VCBO IC=10µA.IE=0 BC212 60 BC213, BC214 45 Emitter Base Voltage VEBO IE=10µA, IC=0 5 Collector Cut off Current ICBO VCB=30V,IE=0 Emitter Cut off Current IEBO VEB=4V, IC=0 DC Current Gain BC212, BC213 hFE IC=10µA,VCE=5V 40 BC214 100 BC212 IC=2mA,VCE=5V 60 BC213 80 BC214 140 BC212, BC214 IC=100mA,VCE=5V* BC213 Collector Emitter Saturation Voltage VCE(sat) IC=10mA,IB=0.5mA IC=100mA,IB=5mA* Base Emitter Saturation Voltage VBE(sat) IC=100mA,IB=5mA* Base Emitter On Voltage VBE(on) IC=2mA,VCE=5V 0.6 ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN DYNAMICS CHARACTERISTICS Transition Frequency BC212 fT IC=10mA, VCE=5V BC213 f=50
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Bc214 | Process 63 PNP Medium Power Transistor | Fairchild |
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BC214 | PNP Transistor | Micro Electronics |
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BC214L | PNP General Purpose Amplifier | Fairchild |
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BC214L | PNP Transistor | Micro Electronics |
| Part Number | Description |
|---|---|
| BC214B | PNP Transistor |
| BC214C | PNP Transistor |
| BC212 | PNP Transistor |
| BC212A | PNP Transistor |
| BC212B | PNP Transistor |
| BC213 | PNP Transistor |
| BC213A | PNP Transistor |
| BC213B | PNP Transistor |
| BC213C | PNP Transistor |
| BC208B | (BC2xx) TRANSISTOR |