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BC177 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Description

Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE

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Datasheet Details

Part number BC177
Manufacturer CDIL
File Size 87.46 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC177 Datasheet

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Part Number Description
BC177A PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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BC171A (BC171 - BC174) NPN Silicon Planar Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.