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2N5770 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR

General Description

SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperature Range Tj, Tstg VALUE

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Datasheet Details

Part number 2N5770
Manufacturer CDIL
File Size 122.04 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Datasheet download datasheet 2N5770 Datasheet

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package EBC VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperature Range Tj, Tstg VALUE 15 30 4.5 50 350 2.8 850 6.