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2N3499 - NPN SILICON PLANAR RF TRANSISTORS

Download the 2N3499 datasheet PDF. This datasheet also covers the 2N3498 variant, as both devices belong to the same npn silicon planar rf transistors family and are provided as variant models within a single manufacturer datasheet.

Description

SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 2N

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Note: The manufacturer provides a single datasheet file (2N3498-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3499
Manufacturer CDIL
File Size 187.23 KB
Description NPN SILICON PLANAR RF TRANSISTORS
Datasheet download datasheet 2N3499 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 2N3498 2N3499 2N3500 2N3501 100 150 100 150 6 500 300 1.0 5.71 5.0 28.
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