2N2369
2N2369 is NPN SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage
SYMBOL VCEO VCES
VALUE 15 40
Collector -Base Voltage
VCBO
Emitter -Base Voltage Collector Current Continuous Collector Current Peak(10us pulse)
VEBO IC IC(peak)
4.5 200 500
Power Dissipation@ Ta=25 deg C
Derate Above 25 deg C @Tc=25 deg C
@Tc=100 deg C
PD PD
2.06 1.2 0.68
Derate Above100 deg C
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage
VCEO- (sus)IC=10m A,...
