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2N2270 - NPN Silicon Planar Transistor

General Description

Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junc

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Datasheet Details

Part number 2N2270
Manufacturer CDIL
File Size 119.46 KB
Description NPN Silicon Planar Transistor
Datasheet download datasheet 2N2270 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Junction to Case SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 45 60 60 7.0 1.0 1.0 5.71 5.0 28.