CSP40P150 mosfet equivalent, p-channel trench power mosfet.
* VDS = -40V,ID =-8A RDS(ON) < 21mΩ @ VGS =-10V RDS(ON) < 31mΩ @ VGS =-4.5V
* High Power and current handing capability
* Lead free product is acquired
* .
Features
* VDS = -40V,ID =-8A RDS(ON) < 21mΩ @ VGS =-10V RDS(ON) < 31mΩ @ VGS =-4.5V
* High Power and current h.
The CSP40P150 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.
Features
* VDS = -40V,ID =-8A RDS(ON).
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