CSP30N75
Description
The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
Key Features
- VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
- High density cell design for ultra low Rdson
- Lead free product is acquired
Applications
- Battery protection
