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CSP30N75 - N-Channel Trench Power MOSFET

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Datasheet Details

Part number CSP30N75
Manufacturer CASS
File Size 527.65 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CSP30N75 Datasheet

General Description

The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a wide variety of applications.

Overview

N-Channel Trench Power MOSFET General.

Key Features

  • VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V.
  • High density cell design for ultra low Rdson.
  • Lead free product is acquired.

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