CSJ60N62A mosfet equivalent, n-channel trench power mosfet.
* VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
Application
* Hard Switched and High Frequency C.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
Features
* VDS=60V；ID=80A@ VGS=10V.
The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
Features
* VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @.
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