CSD01N650 mosfet equivalent, n-channel trench power mosfet.
* VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10V (Typ:90mΩ)
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
Application
* Power switching application
The CSD01N650 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting.
Features
* VDS=100V; ID=11A RDS(ON)<140mΩ @ VGS=10.
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