CS4459 mosfet equivalent, p-channel trench power mosfet.
* VDS = -30V,ID =-6.5A RDS(ON) < 49mΩ @ VGS =-10V RDS(ON) < 80mΩ @ VGS =-4.5V
* High Power and current handing capability
* Lead free product is acquired
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CS4459
Schematic Diagram
Features
* VDS = -30V,ID =-6.5A RDS(ON) < 49mΩ @ VGS =-10V RDS(ON) < 80mΩ @ VGS =-4.5V
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The CS4459 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a load switch or in PWM applications.
CS4459
Schematic Diagram
Features
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