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CS2609 - N- & P-Channel Trench Power MOSFET

Features

  • VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V.
  • VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V.
  • Super high dense cell design for extremely low RDS(ON).
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic Diagram.

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Datasheet Details

Part number CS2609
Manufacturer CASS
File Size 543.71 KB
Description N- & P-Channel Trench Power MOSFET
Datasheet download datasheet CS2609 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CS2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) Features ● VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V ● VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.
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