CS2312 mosfet equivalent, n-channel trench power mosfet.
* VDS = 20V,ID =5A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 34mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired
* Sur.
The CS2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
* VDS = .
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