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CS2312 - N-Channel Trench Power MOSFET

Description

The CS2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

  • VDS = 20V,ID =5A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 34mΩ @ VGS =2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number CS2312
Manufacturer CASS
File Size 618.65 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS2312 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Trench Power MOSFET General Description The CS2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID =5A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 34mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management CS2312 Schematic Diagram Marking and pin Assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2312 CS2312 SOT-23 Reel Size Ø180mm Table 1.
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