MSF8N80-G datasheet, mosfet equivalent, Bruckewell Technology

Features and benefits

* RDS(on) (typ 1.3 Ω )@VGS=10V
* Gate Charge (Typical 39nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.

Application

are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic appl.

Description

This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics. These devices are well suited for high e.

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