MSF6N60 mosfet equivalent, n-channel enhancement mode power mosfet.
VDS=600V
* BVDSS=650V typically @ Tj=150°C
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoH.
ID=5.5A
*FEATURES: VDS=600V
* BVDSS=650V typically @ Tj=150°C
* Low On Resistance
* Simple Drive Require.
The MSF6N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercia.
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