MSF10N40 - 400V N-Channel MOSFET

Bruckewell

General Description

The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

Originative New Design.
Very Low Intrinsic Capacitances.
Excellent Switching Characteristics.
10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V.
Extended Safe Operating Area.
Low gate charge (typ 30nC).
100% Avalanche Tested.
RoHS compliant package.

📥 Download Datasheet

MSF10N40 400v n-channel mosfet by Bruckewell - Datasheet Preview

Datasheet Details

Part number	MSF10N40
Manufacturer	Bruckewell
File Size	1.05 MB
Description	400V N-Channel MOSFET
Datasheet	MSF10N40 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MSF10065V1	Silicon Carbide Diode	Maple Semiconductor
MSF10120V1	Silicon Carbide Diode	Maple Semiconductor
MSF12014AF	(MSF-xxxx) Surface Acoustic Wave Filters	Shindengen Electric
MSF13025BF	(MSF-xxxx) Surface Acoustic Wave Filters	Shindengen Electric
MSF13416AF	(MSF-xxxx) Surface Acoustic Wave Filters	Shindengen Electric

Other Datasheets by Bruckewell

Part Number	Description
MSF10N60	600V N-Channel MOSFET
MSF10N65	650V N-Channel MOSFET
MSF10N80	800V N-Channel MOSFET
MSF10N80A	800V N-Channel MOSFET
MSF11N70	N-Channel 700V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 10.5A, 400V, RDS(on) = 0.