MS9N90 datasheet, mosfet equivalent, Bruckewell

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datasheet Download (Size : 461.02KB)

Features and benefits

* RDS(on) (Max 1.4 Ω )@VGS=10V
* Gate Charge (Typical 47nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested
* Maximum Junction Te.

Application

Features
* RDS(on) (Max 1.4 Ω )@VGS=10V
* Gate Charge (Typical 47nC)
* Improved dv/dt Capability, High Rugge.

Description

The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-.

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