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MS67C10 - N&P-Channel MOSFET

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • Fast switching.
  • Green Device Available.
  • Suit for 4.5V Gate Drive.

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Datasheet Details

Part number MS67C10
Manufacturer Bruckewell
File Size 611.48 KB
Description N&P-Channel MOSFET
Datasheet download datasheet MS67C10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MS67C10 N & P Channel 60-V Dual MOSFETs Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features • Fast switching • Green Device Available • Suit for 4.5V Gate Drive Applications Applications • DC Fan • Motor Drive Applications • Networking • Half / Full Bridge Topology Packing & Order Information 3,000/Reel SO-8 Package information Graphic symbol Publication Order Number: [MS67C10] © Bruckewell Technology Corporation Rev.
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