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P-Channel 20-V (D-S) MOSFET
MS34P07
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players
VDS (V) -20
PRODUCT SUMMARY rDS(on) (mΩ)
34 @ VGS = -4.5V 48 @ VGS = -2.5V
ID(A) -5 -3
TSOP6
Drain: 1,2,5,6 Gate: 3 Source: 4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TA=25°C TA=100°C
TA=25°C
ID
IDM IS PD
-5 -3.3 -20 -1 1.
MS34P07 Datasheet
