MS18N50
Description
The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications Features
- Originative New Design
- Very Low Intrinsic Capacitances
- Excellent Switching Characteristics
- 100% EAS Test
- Extended Safe Operating Area
- Ro HS pliant package Application
- High current, High speed switching
- PFC (Power Factor Correction)
- SMPS (Switched Mode Power Supplies) Packing & Order Information 50/Tube ; 1,000/Box
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
500 V ±30 V 18 A 10.8 A
IDM Drain Current -Pulsed
72 A
EAS Single Pulsed Avalanche Energy
990 m J
EAR Repetitive Avalanche...
