MS13N30 Datasheet | Bruckewell Technology

N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones Features - Low r DS(on) trench technology - Fast switching speed - Low thermal impedance - Ro HS pliant package Applications: - Power Routing - Li Ion Battery Packs - Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13N30] © Bruckewell Technology Corporation Rev. A -2014 N-Channel 30-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS...