MS10N65SJ Description
The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, super junction device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications.
MS10N65SJ Key Features
- Low RDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems