A1SHB mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
D G
S Schematic diagram
* High power and current handing capability
* Lead f.
General Features
* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
D G
S Schematic d.
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