Datasheet4U Logo Datasheet4U.com

AFBR-S4N44C013 - NUV-HD Single Silicon Photo Multiplier

General Description

The Broadcom® AFBR-S4N44C013 is a silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.The active area is 3.72 × 3.72 mm2.

High packing density of the single chip is achieved using through-silicon-via (TSV) technology and a chip sized package (CSP).

Key Features

  • High PDE of more than 55% at 420 nm.
  • Excellent SPTR and CRT.
  • Excellent uniformity of breakdown voltage, 180 mV (3 sigma).
  • Excellent uniformity of gain.
  • With TSV technology (4-side tilable with high fill factors).
  • Size 3.86 × 3.86 mm2.
  • Cell pitch 30 × 30 µm2.
  • Highly transparent glass protection layer.
  • Chip sized package (CSP).
  • Operating temperature range from.
  • 20°C to +50°C.
  • RoHS and REACH compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFBR-S10TR001Z Compact 650 nm Analog Transceiver AVAGO
AFBR-2408Z DC-50MBd Miniature Link Fiber Optic Receiver Avago
AFBR-2409Z 50MBd Miniature Link Fiber Optic Receiver Avago
AFBR-2418MZ DC-50MBd Miniature Link Fiber Optic Receiver Avago
AFBR-2418TZ DC-50MBd Miniature Link Fiber Optic Receiver Avago

Other Datasheets by Broadcom

Part Number Description
AFBR-S4N44P164M 4 x 4 NUV-MT Silicon Photomultiplier Array
AFBR-S4N33C013 NUV-HD Single Silicon Photo Multiplier
AFBR-S4N66C013 NUV-HD Single Silicon Photo Multiplier
AFBR-S4N66P024M 2x1 NUV-MT Silicon Photomultiplier Array
AFBR-S4P11P012R NIR Dual-Channel Silicon Photomultiplier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AFBR-S4N44C013 NUV-HD Single Silicon Photo Multiplier Data Sheet Description The Broadcom® AFBR-S4N44C013 is a silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.The active area is 3.72 × 3.72 mm2. High packing density of the single chip is achieved using through-silicon-via (TSV) technology and a chip sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N44C013 CSPs almost without any edge losses. The passivation layer is made by a glass that is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with a high sensitivity toward the blue- and near-UV region of the light spectrum.