2SC4002 NPN Silicon Triple Diffused Planar Transistor
for High-Voltage Driver Applications.
The transistor is subdivided into two groups,
D and E, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25oC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.18g
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
Tj
TS
Value
400
400
5
200
400
600
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
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7/15/2011
