BR3DG2875M transistor equivalent, silicon npn transistor.
EB ,( 150)，（IB=5mA 1 ）。 High VEBO,high reverse hFE(typ.150,VCE=-2V,IC=-2mA),low on resistance(Ron=1Ω,IB=5mA).
/ Applications 。 For muting and switching applications.
.
。 For muting and switching applications.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN 1：Emitter
PIN 2：Base PIN 3：Collec.
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.
/ Features EB ,( 150)，（IB=5mA 1 ）。 High VEBO,high reverse hFE(typ.150,VCE=-2V,IC=-2mA),low on resistance(Ron=1Ω,IB=5mA).
/ Applications 。 For muting and switching applications.
/.
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