B3965D mosfet equivalent, n- and p-channel 40-v (d-s) mosfet.
40V/5.2A, RDS(ON)=40mΩ@VGS=10V (N-Ch) 40V/4.9A, RDS(ON)=45mΩ@VGS=4.5V (N-Ch) -40V/-4.5A, RDS(ON)=54mΩ@VGS=-10V (P-Ch) -40V/-3.9A, RDS(ON)=72mΩ@VGS=-4.5V (P-Ch) Super High.
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch LCD Display inverter.
The B3965D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.
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