B15N10D mosfet equivalent, n-channel mosfet.
RDS(ON)=105mΩ@VGS=10V High Density Cell Design for Low RDS(ON) Exceptional On-Resistance and Maximum DC Current TO-252-3/TO-220F-3 Package
Pin Configuration
D
G
Applica.
LED backlight LCD monitor LCD TV DC/DC Converter Load Switch
S GDS
℃Absolute Maximum Ratings (TA=25 Unless Otherwise N.
B15N10D/F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlight.
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