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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF030T Description

BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF030T Features

* 21.5 dBm Typical Output Power
* 13.5 dB Typical Power Gain @ 12 GHz
* Low Phase Noise

BCF030T Applications

* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well suited for either wideband or narrow-band applications. The BCF030T is produced using state of the art metallization and devices from each wafer are

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Datasheet Details

Part number
BCF030T
Manufacturer
BeRex
File Size
378.67 KB
Datasheet
BCF030T-BeRex.pdf
Description
HIGH EFFICIENCY HETEROJUNCTION POWER FET

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HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex
BeRex BCF030T-like datasheet